♦Alumina(Al2O3)
Hiki ke hana ʻia nā ʻāpana keramika kikoʻī i hana ʻia e ZhongHui Intelligent Manufacturing Group (ZHHIMG) me nā mea maka keramika maʻemaʻe kiʻekiʻe, 92 ~ 97% alumina, 99.5% alumina, >99.9% alumina, a me ke kaomi isostatic anuanu CIP. ʻO ka sintering wela kiʻekiʻe a me ka mīkini kikoʻī, ka pololei o ka dimensional o ± 0.001mm, ka laumania a hiki i Ra0.1, hoʻohana i ka mahana a hiki i 1600 degere. Hiki ke hana ʻia nā kala like ʻole o nā keramika e like me nā koi o nā mea kūʻai aku, e like me: ʻeleʻele, keʻokeʻo, beige, ʻulaʻula ʻeleʻele, a pēlā aku. ʻO nā ʻāpana keramika kikoʻī i hana ʻia e kā mākou hui he kūpaʻa i ka mahana kiʻekiʻe, ka pala, ka ʻaʻahu a me ka insulation, a hiki ke hoʻohana ʻia no ka manawa lōʻihi i ke kaiapuni wela kiʻekiʻe, vacuum a me ke kinoea corrosive.
Hoʻohana nui ʻia i nā ʻano lako hana semiconductor like ʻole: Nā Frame (bracket keramika), Substrate (kumu), Arm/ Bridge (manipulator), , Nā ʻĀpana Mechanical a me Ceramic Air Bearing.
| Inoa Huahana | Paipu / Paipu / Rod no ka Ceramic Square maʻemaʻe 99 Alumina | |||||
| Papa Kuhikuhi | ʻĀpana | 85% Al2O3 | 95% Al2O3 | 99% Al2O3 | 99.5% Al2O3 | |
| Ka nui o ka paʻa | g/cm3 | 3.3 | 3.65 | 3.8 | 3.9 | |
| Ka omo ʻana o ka wai | % | <0.1 | <0.1 | 0 | 0 | |
| Mahana Sintered | ℃ | 1620 | 1650 | 1800 | 1800 | |
| Paʻakikī | Mohs | 7 | 9 | 9 | 9 | |
| Ikaika Kūlou (20 ℃)) | Mpa | 200 | 300 | 340 | 360 | |
| Ikaika Hoʻopaʻa | Kgf/cm2 | 10000 | 25000 | 30000 | 30000 | |
| Mahana Hana Lōʻihi | ℃ | 1350 | 1400 | 1600 | 1650 | |
| Mahana Hana Loa | ℃ | 1450 | 1600 | 1800 | 1800 | |
| Ke kū'ē ʻana o ka leo | 20℃ | Ω. cm3 | >1013 | >1013 | >1013 | >1013 |
| 100℃ | 1012-1013 | 1012-1013 | 1012-1013 | 1012-1013 | ||
| 300℃ | >109 | >1010 | >1012 | >1012 | ||
Ka hoʻohana ʻana o nā keramika alumina maʻemaʻe kiʻekiʻe:
1. Hoʻopili ʻia i nā lako semiconductor: ʻūpā vacuum seramika, ʻoki ʻana i ka disc, hoʻomaʻemaʻe disc, seramika CHUCK.
2. Nā ʻāpana hoʻoili wafer: nā ʻūpā lawelawe wafer, nā diski ʻoki wafer, nā diski hoʻomaʻemaʻe wafer, nā kīʻaha omo nānā ʻike wafer.
3. ʻOihana hōʻikeʻike pālahalaha LED / LCD: nozzle seramika, disc wili seramika, LIFT PIN, PIN rail.
4. Kamaʻilio Optical, ʻoihana lā: nā paipu seramika, nā koʻokoʻo seramika, nā ʻōpala seramika paʻi pale papa kaapuni.
5. Nā ʻāpana pale wela a me ka hoʻokaʻawale uila: nā bearings seramika.
I kēia manawa, hiki ke hoʻokaʻawale ʻia nā keramika alumini oxide i nā keramika maʻemaʻe kiʻekiʻe a me nā keramika maʻamau. ʻO ka moʻo keramika alumini oxide maʻemaʻe kiʻekiʻe e pili ana i ka mea keramika i loaʻa ma mua o 99.9% Al₂O₃. Ma muli o kona mahana sintering a hiki i ka 1650 - 1990°C a me kona nalu hoʻoili o 1 ~ 6μm, hana pinepine ʻia ia i loko o ke aniani fused ma kahi o ka ipu hoʻoheheʻe platinum: hiki ke hoʻohana ʻia e like me ka paipu sodium ma muli o kona transmittance māmā a me ke kūpaʻa ʻana i ka metala alkali. I ka ʻoihana uila, hiki ke hoʻohana ʻia e like me ka mea insulating alapine kiʻekiʻe no nā substrates IC. Wahi a nā ʻano like ʻole o ka alumini oxide, hiki ke hoʻokaʻawale ʻia ka moʻo keramika alumini oxide maʻamau i 99 keramika, 95 keramika, 90 keramika a me 85 keramika. I kekahi manawa, ua hoʻokaʻawale ʻia nā keramika me 80% a i ʻole 75% o ka alumini oxide maʻamau he moʻo keramika alumini oxide maʻamau. I waena o lākou, hoʻohana ʻia ka mea keramika 99 alumini oxide e hana i ka ipu hoʻoheheʻe wela kiʻekiʻe, ka paipu umu pale ahi a me nā mea kūʻē i ke komo ʻana, e like me nā bearings keramika, nā sila keramika a me nā papa valve. Hoʻohana nui ʻia nā keramika alumini 95 ma ke ʻano he ʻāpana pale i ke komo ʻana i ka pala. Hoʻohui pinepine ʻia nā keramika 85 i kekahi mau waiwai, no laila e hoʻomaikaʻi ana i ka hana uila a me ka ikaika mechanical. Hiki iā ia ke hoʻohana i ka molybdenum, niobium, tantalum a me nā sila metala ʻē aʻe, a hoʻohana ʻia kekahi ma ke ʻano he mau mea hoʻomaʻemaʻe uila.
| Mea Kūlana Kiʻekiʻe (Waiwai Hōʻike) | Inoa Huahana | AES-12 | AES-11 | AES-11C | AES-11F | AES-22S | AES-23 | AL-31-03 | |
| ʻO ka hoʻohuihui kemika Low-Sodium Easy Sintering Product | H₂O | % | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 |
| Lol | % | 0.1 | 0.2 | 0.1 | 0.1 | 0.1 | 0.1 | 0.1 | |
| Fe₂0₃ | % | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | 0.01 | |
| SiO₂ | % | 0.03 | 0.03 | 0.03 | 0.03 | 0.02 | 0.04 | 0.04 | |
| Na₂O | % | 0.04 | 0.04 | 0.04 | 0.04 | 0.02 | 0.04 | 0.03 | |
| MgO* | % | - | 0.11 | 0.05 | 0.05 | - | - | - | |
| Al₂0₃ | % | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | 99.9 | |
| Anawaena ʻāpana waena (MT-3300, ʻano loiloi laser) | μm | 0.44 | 0.43 | 0.39 | 0.47 | 1.1 | 2.2 | 3 | |
| Ka nui o ke aniani α | μm | 0.3 | 0.3 | 0.3 | 0.3 | 0.3 ~ 1.0 | 0.3 ~ 4 | 0.3 ~ 4 | |
| Ka Hoʻokumu ʻana i ka Density** | g/cm³ | 2.22 | 2.22 | 2.2 | 2.17 | 2.35 | 2.57 | 2.56 | |
| Ka nui o ka Sintering** | g/cm³ | 3.88 | 3.93 | 3.94 | 3.93 | 3.88 | 3.77 | 3.22 | |
| Ka emi ʻana o ka helu o ka laina sintering** | % | 17 | 17 | 18 | 18 | 15 | 12 | 7 | |
* ʻAʻole i hoʻokomo ʻia ʻo MgO i ka helu ʻana o ka maʻemaʻe o Al₂O₃.
* ʻAʻohe pauka scaling 29.4MPa (300kg/cm²), ʻo ka mahana sintering he 1600°C.
AES-11 / 11C / 11F: E hoʻohui i ka 0.05 ~ 0.1% MgO, maikaʻi loa ka sinterability, no laila e pili ana i nā keramika alumini oxide me ka maʻemaʻe ma mua o 99%.
AES-22S: Hōʻike ʻia e ka nui o ke kūkulu ʻana a me ka wikiwiki o ka emi ʻana o ka laina sintering, pili ia i ka hoʻolei ʻana i ke ʻano paheʻe a me nā huahana nui ʻē aʻe me ka pololei o ka dimensional i koi ʻia.
AES-23 / AES-31-03: Loaʻa iā ia kahi ʻano hoʻokumu kiʻekiʻe, thixotropy a me ka viscosity haʻahaʻa ma mua o AES-22S. hoʻohana ʻia ka mea mua i nā keramika ʻoiai ʻo ka mea hope e hoʻohana ʻia ma ke ʻano he mea hōʻemi wai no nā mea pale ahi, e loaʻa ana ke kaulana.
♦Nā ʻano o ka Silicon Carbide (SiC)
| Nā ʻano laulā | Ka maʻemaʻe o nā ʻāpana nui (wt%) | 97 | |
| Waihoʻoluʻu | ʻeleʻele | ||
| Ka nui (g/cm³) | 3.1 | ||
| Ka omo ʻana o ka wai (%) | 0 | ||
| Nā ʻano mīkini | Ikaika kūlou (MPa) | 400 | |
| Modulus ʻōpiopio (GPa) | 400 | ||
| Paʻakikī Vickers (GPa) | 20 | ||
| Nā ʻano wela | Mahana hana kiʻekiʻe loa (°C) | 1600 | |
| Ka helu hoʻonui wela | RT~500°C | 3.9 | |
| (1/°C x 10-6) | RT~800°C | 4.3 | |
| Ka hoʻokele wela (W/m x K) | 130 110 | ||
| Ke kū'ē ʻana i ka haʻalulu wela ΔT (°C) | 300 | ||
| Nā ʻano uila | Ke kū'ē ʻana o ka leo | 25°C | 3 x 106 |
| 300°C | - | ||
| 500°C | - | ||
| 800°C | - | ||
| Paʻa mau o ka dielectric | 10GHz | - | |
| Ka pohō dielectric (x 10-4) | - | ||
| Q Factor (x 104) | - | ||
| Ka uila haki dielectric (KV/mm) | - | ||
♦ʻO ka seramika silicon nitride
| Mea Hana | ʻĀpana | Si₃N₄ |
| ʻAno Sintering | - | Kaomi Kinoea Sintered |
| Ka nui o ka paʻa | g/cm³ | 3.22 |
| Waihoʻoluʻu | - | Hinaʻeleʻele |
| Ka helu omo wai | % | 0 |
| ʻŌpio Modulus | GPA | 290 |
| Paʻakikī Vickers | GPA | 18 - 20 |
| Ikaika Hoʻopaʻa | Mpa | 2200 |
| Ikaika Kūlou | Mpa | 650 |
| Ka Hoʻokele Wela | W/mK | 25 |
| Ke kū'ē ʻana i ka haʻalulu wela | Δ (°C) | 450 - 650 |
| Mahana Hana Kiʻekiʻe Loa | °C | 1200 |
| Ke kū'ē ʻana o ka leo | Ω·kenimi | > 10 ^ 14 |
| Paʻa Dielectric | - | 8.2 |
| Ikaika Dielectric | kV/mm | 16 |